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 SMD Efficient Fast Recovery Rectifier
CEFA101-G Thru CEFA105-G (RoHS Device)
Reverse Voltage: 50 ~ 600 Volts Forward Current: 1.0 Amp Features:
Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0. Super fast recovery time for high efficient Built-in strain relief Low forward voltage drop
0.067(1.70) 0.051(1.29) 0.110(2.79) 0.086(2.18)
DO-214AC (SMA)
0.180(4.57) 0.160(4.06) 0.012(0.31)
Mechanical Data:
Case: JEDEC DO-214AC molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Approx. Weight: 0.063 gram
0.006(0.15) 0.091(2.31) 0.067(1.70) 0.059(1.50) 0.035(0.89) 0.008(0.20) 0.004(0.10)
0.209(5.31) 0.185(4.70)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characterics:
Parameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Max. Average Forward Current Max. Instantaneous Forward Voltage at 1.0A Reverse recovery time Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25oC Ta=100oC Max. Thermal Resistance (Note1) Max. Operating Junction Temperature Storage Temperature Symbol CEFA101-G 50 50 35 CEFA102-G 100 100 70 CEFA103-G CEFA104-G CEFA105-G 200 200 140 400 400 280 600 600 420 Unit V V V
VRRM VDC VRMS IFSM Io VF Trr IR R
JL
30
A
1.0 0.92 25 1.25 35 1.3 50
A V nS uA
o C/W oC o
5.0 200 25 150 -55 to +150
Tj TSTG
C
Note1: Thermal resistance from junction to lead mounted on PCB with 8.0mmx8.0mm 2 copper pad areas.
"-G" suffix designates RoHS compliant Version
Page1
SMD Efficient Fast Recovery Rectifier
Rating and Characteristic Curves (CEFA101-G Thru CEFA105-G)
Fig. 1 - Reverse Characteristics
100 10
Fig.2 - Forward Characteristics
CEFA101-103
Tj=125 C
Reverse Current (uA)
Forward current ( A )
10
1.0
CEFA104
Tj=75 C
1.0
0.1
CEFA105
0.01 Tj=25 C Pulse width 300uS 4% duty cycle
0.1
Tj=25 C
0.01 0 15 30 45 60 75 90 105 120 135 150
0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Percent of Rated Peak Reverse Voltage (%)
Forward Voltage (V)
Fig. 3 - Junction Capacitance
35
Fig. 4 - Non Repetitive Forward Surge Current
50
Peak Surge Forward Current (A)
30
f=1MHz and applied 4VDC reverse voltage Tj=25 C
8.3mS Single Half Sine Wave JEDEC methode 40
Junction Capacitance (pF)
25 20
30
CEFA101-103
15 10
Tj=25 C
20
CEFA104-105
10 0
5 0 0.01 0.1 1.0 10 100
1
5
10
50
100
Reverse Voltage (V)
Number of Cycles at 60Hz
Fig 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics
2.8 50 NONINDUCTIVE 10 NONINDUCTIVE +0.5A trr
| | | | | | | |
Fig. 6 - Current Derating Curve
2.4
Average Forward Current (A)
2.0 1.6 1.2 0.8 0.4 00
(+) 25Vdc (approx.) () 1 NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T.
() 0 PULSE GENERATOR (NOTE 2) (+) -0.25A
Single Phase Half Wave 60Hz
Notes: 1. Rise Time = 7ns max., Input Impedance = 1 megohm.22pF. 2. Rise Time = 10ns max., Source Impedance = 50 ohms.
-1.0A 1cm
25
50
75
100
125
150
175
Set Time Base For 50 / 10ns / cm
Ambient Temperature ( C)
"-G" suffix designates RoHS compliant Version
Page2


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